开关电源中的一些英文缩写室外一体化电源机柜,高频开关电源，-48V开关电源

开关电源中的一些英文缩写

OCP over current protection 过流保护

OLP over load protection 过载保护

OVP over voltage protection 过压保护

OTP over temperature protection 过温保护

ESD eletro-static discharge 静电释放

UVLO under voltage lock out 欠压闭锁

PFC power factor correcion 功率因数校正

burst mode 跳周期模式 一般在空载下，启动几个周期，然后关闭几个周期，以减少空载待机功耗。

hiccup mode 打嗝模式，异常状态下的反复重启

Hiccup-mode is a method of operation in a power supply whose purpose is to protect the power supply from being damaged during an over-current fault condition. It also enables the power supply to restart when the fault is removed.

source current 拉电流 输出端向外电路流出的负载电流

sink current 灌电流 从外电路流入输出端的负载电流

quiescent current 静态电流

RCD residual current devices 剩余电流动作保护器

MOSFET栅极与源极间电阻

一、为场效应管提供偏置电压；二、起到泻放电阻的作用——保护栅极G-源极S；第一个作用好理解，这里解释一下第二个作用的原理——保护栅极G-源极S：场效应管的G-S极间的电阻值是很大的，这样只要有少量的静电就能使他的G-S极间的等效电容两端产生很高的电压，如果不及时把这些少量的静电泻放掉，他两端的高压就有可能使场效应管产生误动作，甚至有可能击穿其G-S极；这时栅极与源极之间加的电阻就能把上述的静电泻放掉，从而起到了保护场效应管的作用。通信电源,室内通信电源机柜,室外通信电源机柜,室外壁挂通信电源机柜,室内壁挂通信电源机柜,嵌入式通信电源系统,整流模块,监控模块,BBU,RRU,逆变器,室外一体化UPS电源,UPS不间断电源,48V50AH锂电池,蓄电池,蓄电池架,蓄电池柜,蓄电池巡检仪,蓄电池连接线, 交流配电单元,直流配电单元,交流配电箱, 局端嵌入式直流远供电源系统, 远端嵌入式直流远供电源系统 ,室外一体化电源机柜,高频开关电源，-48V开关电源 

MOS管栅极与漏极和源极之间的绝缘电阻很高，绝缘层很薄，栅极很容易积累电荷把绝缘层击穿而损坏MOS管，在使用过程中如果有较高电压加到栅极也要击穿绝缘层而损坏MOS管，所以要在MOS管栅极并联稳压管以限制栅极电压在稳压管稳压值以下，保护MOS管栅极不被击穿。MOS管栅极并联的电阻是为了释放栅极电荷，不让电荷积累。总之与MOS管栅极并联的电阻稳压管起保护MOS管栅极的作用。

Some English abbreviations in switching power supply

It

Over current protection of OCP over current protection

OLP over load protection overload protection

OVP over voltage protection overvoltage protection

Over temperature protection of OTP over temperature protection

ESD eletro-static discharge electrostatic release

UVLO under voltage lock out undervoltage locking

PFC power factor correcion power factor correction

The burst mode hopping mode usually starts several cycles under no load, and then closes several cycles to reduce the standby power consumption.

Hiccup mode hiccup mode, repeated restart under abnormal condition

Hiccup-mode is a method of operation in a power supply whose purpose.

Source current pulls the load current out of the current output terminal.

Sink current current load flowing from external circuit to output current

Quiescent current static current

RCD residual current devices Residual Current Operated Protector

The resistance between the gate and the source of MOSFET

First, provide bias voltage for field effect tube; two, play the role of draining resistance - protect the gate G- source S; the first effect is good understanding, here explains the principle of the two function - protect the gate G- source S: the resistance of the G-S pole of the field effect tube is very large so that as long as there is a small amount of static electricity can make him The equivalent capacitor at both ends of the G-S pole produces a high voltage. If the small amount of electrostatic discharge is not released in time, the high pressure at both ends may cause the misoperation of the field effect tube and may even break through its G-S pole. The role of the protective field effect tube. Communication power supply, indoor communication power cabinet, outdoor communication power supply cabinet, outdoor wall hanging communication power supply cabinet, indoor wall hanging communication power supply cabinet, embedded communication power system, rectifier module, monitoring module, BBU, RRU, inverter, outdoor integrated UPS power, UPS no broken power supply, 48V50AH lithium battery, battery, accumulator rack, accumulator cabinet, storage battery Battery inspection instrument, battery connection line, AC distribution unit, DC distribution unit, AC distribution box, local embedded DC power supply system, remote embedded DC power supply system, outdoor integrated power supply cabinet, high frequency switching power supply, -48V switching power supply

The insulation resistance between the gate of the MOS tube and the drain and the source is very high, the insulating layer is very thin, the gate is very easy to accumulate the charge to destroy the insulating layer and damage the MOS tube. In the process of use, if the high voltage is added to the gate, the insulation layer must be worn and the MOS tube is damaged, so the voltage of the gate is kept in the MOS tube gate to limit the grid voltage to be stable. The MOS tube gate is protected from breakdown under the pressure stabilizing value of the pressure tube. The resistance of the MOS tube grid is parallel to release the gate charge and not charge accumulation. In short, the resistance voltage regulator parallel to the MOS tube gate acts as a protection for the MOS gate.